The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Nov. 17, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Steven C. H. Hung, Sunnyvale, CA (US);
Benjamin Colombeau, Salem, MA (US);
Myungsun Kim, Pleasanton, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Yixiong Yang, San Jose, CA (US);
Jacqueline Samantha Wrench, Santa Clara, CA (US);
Yong Yang, Mountain View, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 29/0673 (2013.01); H01L 29/7856 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method of forming a gate stack structure includes forming a dipole metal layer on a high-κ gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-κ gate dielectric layer.