The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jul. 28, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Myungsun Kim, Pleasanton, CA (US);
Jingmei Liang, San Jose, CA (US);
Martin J. Seamons, San Jose, CA (US);
Michael Stolfi, Clifton Park, NY (US);
Benjamin Colombeau, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H10D 30/01 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/02532 (2013.01); H01L 21/31111 (2013.01); H10D 30/031 (2025.01); H10D 86/0212 (2025.01);
Abstract
Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.