The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jul. 28, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Myungsun Kim, Pleasanton, CA (US);
Michael Stolfi, Clifton Park, NY (US);
Benjamin Colombeau, San Jose, CA (US);
Andy Lo, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02252 (2013.01); H01L 21/02301 (2013.01); H01L 21/823431 (2013.01); H01L 29/0673 (2013.01); H01L 29/157 (2013.01); H01L 29/1604 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01); H01L 29/66545 (2013.01); H01L 2029/7858 (2013.01);
Abstract
Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.