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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Shiyu Sun

This inventor holds 27 USPTO granted patents and 4 published patent applications, primarily in Image Sensor Technology. Top assignees: Applied Materials, Inc., Omnivision Technologies, Inc., Varian Semiconductor Equipment Associates, Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiyu Sun. Retrieved from https://idiyas.com/inventor/shiyu-sun-0vu6vlwc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 88.9

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 182(Granted Patents)


Location History:

  • San Jose, CA (US) (2014 - 2022)
  • Santa Clara, CA (US) (2016 - 2023)
  • Cupertino, CA (US) (2021 - 2023)

Company Filing History:

goldMedal17 out of 14,454 
 
Applied Materials, Inc.
 patents
silverMedal8 out of 1,414 
 
Omnivision Technologies, Inc.
 patents
bronzeMedal2 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents

Years Active: 2014-2026

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Areas of Expertise:
Image Sensor
Pixel Cell
Anti-Blooming
Surface Passivation
Nanowire
Device Isolation
3D Device
Semiconductor Fabrication
Horizontal Gate All Around
Deep Trench Isolation
Hybrid Bonding
FinFET
27 patents (USPTO):Explore Patents
1. 12635272 - Artifact-reducing pixel and method (2026-05-19),
2. 12289927 - Image sensor diagonal isolation structures (2025-04-29),
3. 12262563 - Pixel cell having anti-blooming structure and image sensor (2025-03-25),
4. 12176364 - Passivation-enhanced image sensor and surface-passivation method (2024-12-24),
5. 11848369 - Horizontal gate-all-around device nanowire air gap spacer formation (2023-12-19),
6. 11769779 - Method for passivating full front-side deep trench isolation structure (2023-09-26),
7. 11670662 - Semiconductor substrate with passivated full deep-trench isolation and associated methods of manufacture (2023-06-06),
8. 11282936 - Horizontal gate all around device nanowire air gap spacer formation (2022-03-22),
9. 11233088 - Metal routing in image sensor using hybrid bonding (2022-01-25),
10. 11145761 - Horizontal gate all around and FinFET device isolation (2021-10-12),
11. 11121169 - Metal vertical transfer gate with high-k dielectric passivation lining (2021-09-14),
12. 11018223 - Methods for forming device isolation for semiconductor applications (2021-05-25),
13. 10790183 - Selective oxidation for 3D device isolation (2020-09-29),
14. 10777650 - Horizontal gate all around device nanowire air gap spacer formation (2020-09-15),
15. 10573719 - Horizontal gate all around device isolation (2020-02-25),

Title: The Innovative Journey of Shiyu Sun

Introduction: Shiyu Sun, a talented inventor based in Santa Clara, CA, has been making waves in the world of technology with her groundbreaking innovations.

Latest Patents: Shiyu Sun's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics and a revolutionary wearable device for monitoring health metrics in real-time.

Career Highlights: With a background in computer science and engineering, Shiyu Sun has worked for top tech companies in Silicon Valley, where she honed her skills in developing innovative solutions to complex problems.

Collaborations: Throughout her career, Shiyu Sun has collaborated with leading researchers and engineers from prestigious universities and research institutions to push the boundaries of technology and bring her ideas to life.

Conclusion: Shiyu Sun's passion for innovation and her dedication to creating impactful inventions continue to inspire the next generation of inventors in the ever-evolving tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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