The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Sep. 28, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shiyu Sun, Santa Clara, CA (US);

Naomi Yoshida, Sunnyvale, CA (US);

Theresa Kramer Guarini, San Jose, CA (US);

Sung Won Jun, San Jose, CA (US);

Benjamin Colombeau, Salem, MA (US);

Michael Chudzik, Mountain View, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/0228 (2013.01); H01L 21/0245 (2013.01); H01L 21/02236 (2013.01); H01L 21/02247 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H01L 29/15 (2013.01); H01L 29/157 (2013.01); H01L 29/158 (2013.01);
Abstract

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.


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