IDiyas

For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Naomi Yoshida

USPTO Granted Patents = 43 

Average Co-Inventor Count = 5.5

ph-index = 7

Forward Citations = 406(Granted Patents)


Location History:

  • Narita, JP (2002 - 2005)
  • Sunnyvale, CA (US) (2006 - 2024)

Company Filing History:

goldMedal40 out of 13,684 
 
Applied Materials, Inc.
 patents
silverMedal3 out of 15,458 
 
University of California
 patents
bronzeMedal2 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2002-2024

where 'Filed Patents' based on already Granted Patents

43 patents (USPTO):
1. 12062545 - Fluorine-free tungsten ALD for dielectric selectivity improvement (2024-08-13),
2. 12046508 - Method of dielectric material fill and treatment (2024-07-23),
3. 11894233 - Electronic device having an oxygen free platinum group metal film (2024-02-06),
4. 11888045 - Integrated dipole flow for transistor (2024-01-30),
5. 11848369 - Horizontal gate-all-around device nanowire air gap spacer formation (2023-12-19),
6. 11830725 - Method of cleaning a structure and method of depositing a capping layer in a structure (2023-11-28),
7. 11615984 - Method of dielectric material fill and treatment (2023-03-28),
8. 11488830 - Oxygen free deposition of platinum group metal films (2022-11-01),
9. 11282936 - Horizontal gate all around device nanowire air gap spacer formation (2022-03-22),
10. 11245022 - Integrated dipole flow for transistor (2022-02-08),
11. 11145761 - Horizontal gate all around and FinFET device isolation (2021-10-12),
12. 11075276 - Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors (2021-07-27),
13. 10777650 - Horizontal gate all around device nanowire air gap spacer formation (2020-09-15),
14. 10727080 - Tantalum-containing material removal (2020-07-28),
15. 10665450 - Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films (2020-05-26),

Title: Naomi Yoshida: A Pioneer in Semiconductor Innovations

Introduction

Naomi Yoshida, based in Sunnyvale, CA, has made significant contributions to the field of semiconductor technology through her innovative inventions. With an impressive portfolio of 43 patents, Yoshida has established herself as a leading figure in the industry.

Latest Patents

Among Naomi's latest patents are the innovations titled "Fluorine-free tungsten ALD for dielectric selectivity improvement" and "Method of dielectric material fill and treatment." The first patent details methods for forming metallic tungsten films on selective surfaces, enhancing the performance of dielectric materials. The second patent focuses on the oxygen-based treatment of low-k dielectric layers, improving capacitance and reliability while eliminating voids in semiconductor devices.

Career Highlights

Throughout her career, Naomi has been associated with prominent institutions, including Applied Materials, Inc. and the University of California. Her work has not only advanced semiconductor technology but has also paved the way for future innovations in the industry.

Collaborations

Naomi's journey in research and innovation has seen her collaborate with talented individuals like Shiyu Sun and Lin Dong. These collaborations have contributed to the successful development of new technologies and have helped establish robust methodologies within the field.

Conclusion

Naomi Yoshida's dedication to innovation and her impressive body of work serve as an inspiration for the next generation of inventors in the semiconductor industry. Her continued efforts in creating groundbreaking technologies will undoubtedly have a lasting impact on the field.

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