Location History:
- Narita, JP (2002 - 2005)
- Sunnyvale, CA (US) (2006 - 2024)
Company Filing History:
40 out of 13,713 
3 out of 15,475 
2 out of 916 
Years Active: 2002-2024
Areas of Expertise:
Title: Naomi Yoshida: A Pioneer in Semiconductor Innovations
Introduction
Naomi Yoshida, based in Sunnyvale, CA, has made significant contributions to the field of semiconductor technology through her innovative inventions. With an impressive portfolio of 43 patents, Yoshida has established herself as a leading figure in the industry.
Latest Patents
Among Naomi's latest patents are the innovations titled "Fluorine-free tungsten ALD for dielectric selectivity improvement" and "Method of dielectric material fill and treatment." The first patent details methods for forming metallic tungsten films on selective surfaces, enhancing the performance of dielectric materials. The second patent focuses on the oxygen-based treatment of low-k dielectric layers, improving capacitance and reliability while eliminating voids in semiconductor devices.
Career Highlights
Throughout her career, Naomi has been associated with prominent institutions, including Applied Materials, Inc. and the University of California. Her work has not only advanced semiconductor technology but has also paved the way for future innovations in the industry.
Collaborations
Naomi's journey in research and innovation has seen her collaborate with talented individuals like Shiyu Sun and Lin Dong. These collaborations have contributed to the successful development of new technologies and have helped establish robust methodologies within the field.
Conclusion
Naomi Yoshida's dedication to innovation and her impressive body of work serve as an inspiration for the next generation of inventors in the semiconductor industry. Her continued efforts in creating groundbreaking technologies will undoubtedly have a lasting impact on the field.