The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Jun. 04, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ilanit Fisher, San Jose, CA (US);

Chi-Chou Lin, San Jose, CA (US);

Kedi Wu, Fremont, CA (US);

Wen Ting Chen, San Jose, CA (US);

Shih Chung Chen, Cupertino, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Mandyam Sriram, San Jose, CA (US);

Chenfei Shen, San Jose, CA (US);

Naomi Yoshida, Sunnyvale, CA (US);

He Ren, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/0227 (2013.01); C23C 16/04 (2013.01); C23C 16/14 (2013.01); C23C 16/45553 (2013.01); H01L 21/02068 (2013.01);
Abstract

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.


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