The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Aug. 17, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Yixiong Yang, San Jose, CA (US);
Paul F. Ma, Santa Clara, CA (US);
Wei V. Tang, Santa Clara, CA (US);
Wenyu Zhang, San Jose, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Chen Han Lin, Campbell, CA (US);
Chi-Chou Lin, San Jose, CA (US);
Yi Xu, San Jose, CA (US);
Yu Lei, Foster City, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Lin Dong, San Jose, CA (US);
Siddarth Krishnan, Newark, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.