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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Paul F Ma

USPTO Granted Patents = 82 

 

Average Co-Inventor Count = 5.4

ph-index = 9

Forward Citations = 1,050(Granted Patents)

Forward Citations (Not Self Cited) = 1,024(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (2009 - 2015)
  • Santa Clara, CA (US) (2010 - 2023)
  • Scottsdale, AZ (US) (2020 - 2024)

Company Filing History:

goldMedal69 out of 13,713 
 
Applied Materials, Inc.
 patents
silverMedal12 out of 1,140 
 
Asm IP Holding B.v.
 patents
bronzeMedal1 out of 1,521 
 
Cornell Research Foundation Inc.
 patents

Years Active: 2009-2025

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Areas of Expertise:
Gas Mixture Apparatus
Selective Deposition
Metal Nitride Films
Atomic Layer Deposition
Cobalt Films
Transition Metal Layers
Self-Assembled Monolayers
Doping Control
Wafer Treatment
Cryogenic Gas Stream
High Reflectivity Aluminum
Defect-Free Structures
82 patents (USPTO):Explore Patents
1. 12473641 - Apparatus for providing a gas mixture to a reaction chamber and method of using same (2025-11-18),
2. 12472539 - Methods and apparatus for cleaning a vessel (2025-11-18),
3. D1099184 - Weighted lift pin (2025-10-21),
4. 12351903 - Method and system for depositing molybdenum layers (2025-07-08),
5. 12241158 - Method for forming structures including transition metal layers (2025-03-04),
6. 12237171 - Method of forming vanadium nitride layer and structure including the vanadium nitride layer (2025-02-25),
7. 12006572 - Reactor system including a gas distribution assembly for use with activated species and method of using same (2024-06-11),
8. 11901175 - Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer (2024-02-13),
9. 11885013 - Method of forming vanadium nitride layer and structure including the vanadium nitride layer (2024-01-30),
10. 11791153 - Deposition of hafnium oxide within a high aspect ratio hole (2023-10-17),
11. 11735420 - Wafer treatment for achieving defect-free self-assembled monolayers (2023-08-22),
12. 11674220 - Method for depositing molybdenum layers using an underlayer (2023-06-13),
13. 11587829 - Doping control of metal nitride films (2023-02-21),
14. 11515155 - Methods for enhancing selectivity in SAM-based selective deposition (2022-11-29),
15. 11424119 - Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer (2022-08-23),

Title: The Innovative Journey of Paul F Ma

Introduction: Paul F Ma, a visionary inventor based in Santa Clara, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Paul F Ma holds several patents in the areas of artificial intelligence, machine learning, and semiconductor technology, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Paul F Ma has worked for leading tech companies, where he played a key role in developing next-generation products and solutions. His innovative mindset and problem-solving skills have led to the successful implementation of various projects.

Collaborations: Throughout his career, Paul F Ma has collaborated with top researchers, engineers, and scientists in the industry, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the development of revolutionary technologies that have shaped the tech landscape.

Conclusion: Paul F Ma's relentless pursuit of innovation and his passion for pushing the boundaries of technology have established him as a prominent figure in the world of inventions. His contributions continue to inspire future generations of inventors and pave the way for technological advancements.

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