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For the Inventor, By the Inventor

Watervliet, NY, United States of America

Tadahiro Ishizaka

This inventor holds 60 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Manufacturing (CPC class H01L). Top assignees: Tokyo Electron Limited, Tokyo Electron Limi Ted. Active years: 2006-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tadahiro Ishizaka. Retrieved from https://idiyas.com/inventor/tadahiro-ishizaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 60 

% Patents Active = 68.3

Average Co-Inventor Count = 2.4

ph-index = 11

Forward Citations = 1,818(Granted Patents)

Forward Citations (Not Self Cited) = 1,786(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Albany, NY (US) (2008 - 2010)
  • Waterlivet, NY (US) (2010)
  • Kofu, JP (2012)
  • Watervliet, NY (US) (2008 - 2014)
  • Clifton Park, NY (US) (2008 - 2015)
  • Tokyo, JP (2017)
  • Hokuto, JP (2017 - 2018)
  • Yamanashi, JP (2011 - 2021)
  • Nirasaki, JP (2006 - 2022)

Company Filing History:

goldMedal59 out of 10,904 
 
Tokyo Electron Limited
 patents
silverMedal1 out of 103 
 
Tokyo Electron Limi Ted
 patents

Years Active: 2006-2022

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Areas of Expertise:
Surface Processing
Copper Wiring
Ruthenium Films
Semiconductor Device
Etching Method
Film Forming
ALD Barrier Layer
CVD Ru Liner
Metal Nanodots
Reactive Metal
Diffusion Barrier
Plasma Cleaning
60 patents (USPTO):Explore Patents
1. 11387112 - Surface processing method and processing system (2022-07-12),
2. 11152260 - Embedding method and processing system (2021-10-19),
3. 10927453 - TiN-based film and TiN-based film forming method (2021-02-23),
4. 10847379 - Etching method and etching apparatus (2020-11-24),
5. 10629433 - Method of manufacturing ruthenium wiring (2020-04-21),
6. 10522467 - Ruthenium wiring and manufacturing method thereof (2019-12-31),
7. 10490443 - Selective film forming method and method of manufacturing semiconductor device (2019-11-26),
8. 10483100 - Method for forming TiON film (2019-11-19),
9. 10460988 - Removal method and processing method (2019-10-29),
10. 10199451 - Lower electrode of DRAM capacitor and manufacturing method thereof (2019-02-05),
11. 10096548 - Method of manufacturing Cu wiring (2018-10-09),
12. 10056328 - Ruthenium metal feature fill for interconnects (2018-08-21),
13. 9932669 - Metal nanodot formation method, metal nanodot formation apparatus and semiconductor device manufacturing method (2018-04-03),
14. 9779950 - Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method (2017-10-03),
15. 9711449 - Ruthenium metal feature fill for interconnects (2017-07-18),

Title: Innovations by Tadahiro Ishizaka: Pioneering Patents in Surface Processing

Introduction: Tadahiro Ishizaka, an inventive force located in Watervliet, New York, is recognized for his substantial contributions to the field of surface processing technologies. With an impressive portfolio of 60 patents, Ishizaka has demonstrated his expertise in developing innovative methods and systems that enhance various manufacturing processes.

Latest Patents: Among Ishizaka's notable inventions are two recent patents that focus on advancements in surface processing. The first, titled "Surface Processing Method and Processing System," outlines a method for treating substrates with metal layers in insulating films. This innovative approach involves supplying a halogen-containing gas into a processing chamber, effectively removing metal oxide from the bottom of the substrate's recess.

The second patent, "Embedding Method and Processing System," describes a procedure that includes removing the metal oxide film from the surface of a metal layer in a substrate. It introduces a novel technique for embedding ruthenium in the recess, forming a ruthenium liner film, and further enhancing the substrate with additional ruthenium embedding.

Career Highlights: Tadahiro Ishizaka's professional journey is marked by his role at Tokyo Electron Limited, a leader in the semiconductor and flat panel display industries. His work has significantly advanced the company's technological capabilities in surface processing, making him a key figure in pioneering innovative solutions that cater to modern manufacturing demands.

Collaborations: Throughout his career, Ishizaka has collaborated with talented professionals, including his coworkers Yasushi Mizusawa and Shigeru Mizuno. These partnerships have fostered a collaborative environment that encourages creativity and the exchange of ideas, ultimately leading to the development of groundbreaking technologies.

Conclusion: Tadahiro Ishizaka exemplifies the spirit of innovation and dedication to advancing technology in surface processing. With a robust patent portfolio and significant contributions to the industry, he continues to inspire future generations of inventors and researchers aiming to push the boundaries of what is possible in manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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