The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Feb. 20, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Tadahiro Ishizaka, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/324 (2006.01); H01L 23/532 (2006.01); C23C 16/04 (2006.01); H01L 21/768 (2006.01); C23C 16/16 (2006.01); H01L 21/285 (2006.01); C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/045 (2013.01); C23C 16/16 (2013.01); C23C 16/18 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/28556 (2013.01); H01L 21/324 (2013.01); H01L 21/3212 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 23/53266 (2013.01);
Abstract

A first aspect of the present disclosure provides a ruthenium wiring manufacturing method of manufacturing a ruthenium wiring by filling a recess, with respect to a substrate including a predetermined film having the recess formed in a surface thereof. The method includes: embedding a first ruthenium film in the recess by forming the first ruthenium film by CVD using a ruthenium raw material gas; forming an additional layer by forming a second ruthenium film on the first ruthenium film embedded in the recess by CVD using the ruthenium raw material gas at a film forming rate higher than that at a time of embedding; and flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.


Find Patent Forward Citations

Loading…