The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Mar. 16, 2016
Tokyo Electron Limited, Tokyo, JP;
Kenji Matsumoto, Miyagi, JP;
Tadahiro Ishizaka, Yamanashi, JP;
Peng Chang, Miyagi, JP;
Osamu Yokoyama, Yamanashi, JP;
Takashi Sakuma, Yamanashi, JP;
Hiroyuki Nagai, Yamanashi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In a Cu wiring manufacturing method, a MnOfilm which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOfilm to reduce the surface of the MnOfilm. A Ru film is formed by CVD on the surface of the MnOfilm which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOfilm and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.