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For the Inventor, By the Inventor

Nirasaki, Japan

Osamu Yokoyama

USPTO Granted Patents = 16

Average Co-Inventor Count = 6.3

ph-index = 4

Forward Citations = 47(Granted Patents)


Location History:

  • Sagamihara, JP (2001 - 2002)
  • Nirasaki, JP (2011 - 2016)
  • Yamanashi, JP (2013 - 2023)

Company Filing History:

goldMedal16 out of 10,295 
 
Tokyo Electron Limited
 patents

Years Active: 2001-2025

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16 patents (USPTO):Explore Patents
1. 12347676 - Substrate processing method and substrate processing system (2025-07-01),
2. 11626290 - Method, device, and system for etching silicon oxide film (2023-04-11),
3. 10242878 - Substrate processing method and recording medium (2019-03-26),
4. 10096548 - Method of manufacturing Cu wiring (2018-10-09),
5. 9425093 - Copper wiring forming method, film forming system, and storage medium (2016-08-23),
6. 9406558 - Cu wiring fabrication method and storage medium (2016-08-02),
7. 9406557 - Copper wiring forming method with Ru liner and Cu alloy fill (2016-08-02),
8. 9362166 - Method of forming copper wiring (2016-06-07),
9. 9253862 - Plasma processing method and plasma processing apparatus (2016-02-02),
10. 8859422 - Method of forming copper wiring and method and system for forming copper film (2014-10-14),
11. 8399353 - Methods of forming copper wiring and copper film, and film forming system (2013-03-19),
12. 8277889 - Film formation method and film formation apparatus (2012-10-02),
13. 8029873 - Film deposition method and film deposition apparatus of metal film (2011-10-04),
14. 8026176 - Film forming method, plasma film forming apparatus and storage medium (2011-09-27),
15. 6355902 - Plasma film forming method and plasma film forming apparatus (2002-03-12),

Title: The Innovative Contributions of Osamu Yokoyama

Introduction

Osamu Yokoyama is a prominent inventor based in Nirasaki, Japan, known for his significant contributions to substrate processing technologies. With a total of 16 patents to his name, Yokoyama has made remarkable advancements in the field of semiconductor manufacturing.

Latest Patents

Yokoyama's latest patents include a substrate processing method and a substrate processing system. The substrate processing method involves preparing a substrate with a base that has an epitaxial layer formed by epitaxial growth, along with an insulating film that has a penetration portion exposing the epitaxial layer. This method also details the formation of a silicon film on the exposed surface of the epitaxial layer and the subsequent formation of a metal film that reacts with the silicon film to create a metal silicide film. Another notable patent is a method, device, and system for etching silicon oxide film. This method entails alternately heating the substrate, supplying hydrogen fluoride gas and ammonia gas to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product. The process includes removing a portion of the reaction product while maintaining the substrate's heating.

Career Highlights

Osamu Yokoyama is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His work has been instrumental in developing innovative technologies that enhance substrate processing efficiency and effectiveness.

Collaborations

Yokoyama has collaborated with notable colleagues, including Takashi Sakuma and Tadahiro Ishizaka, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Osamu Yokoyama's innovative work and numerous patents have significantly impacted the semiconductor industry. His contributions continue to shape the future of substrate processing technologies.

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