The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Feb. 09, 2007
Takashi Sakuma, Nirasaki, JP;
Taro Ikeda, Nirasaki, JP;
Osamu Yokoyama, Nirasaki, JP;
Tsukasa Matsuda, Albany, NY (US);
Tatsuo Hatano, Nirasaki, JP;
Yasushi Mizusawa, Albany, NY (US);
Takashi Sakuma, Nirasaki, JP;
Taro Ikeda, Nirasaki, JP;
Osamu Yokoyama, Nirasaki, JP;
Tsukasa Matsuda, Albany, NY (US);
Tatsuo Hatano, Nirasaki, JP;
Yasushi Mizusawa, Albany, NY (US);
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.