The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Mar. 09, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tadahiro Ishizaka, Nirasaki, JP;

Takashi Sakuma, Nirasaki, JP;

Osamu Yokoyama, Nirasaki, JP;

Kenji Matsumoto, Nirasaki, JP;

Peng Chang, Nirasaki, JP;

Hiroyuki Nagai, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76843 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.


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