The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jun. 26, 2014
Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventors:

Osamu Yokoyama, Nirasaki, JP;

Cheonsoo Han, Nirasaki, JP;

Takashi Sakuma, Nirasaki, JP;

Chiaki Yasumuro, Nirasaki, JP;

Tatsuo Hirasawa, Nirasaki, JP;

Tadahiro Ishizaka, Nirasaki, JP;

Kenji Suzuki, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76867 (2013.01); H01L 21/76876 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 21/2885 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.


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