The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Sep. 23, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yuichiro Wagatsuma, Nirasaki, JP;

Masahisa Watanabe, Nirasaki, JP;

Mayuko Nakamura, Nirasaki, JP;

Takashi Sakuma, Nirasaki, JP;

Osamu Yokoyama, Nirasaki, JP;

Kwangpyo Choi, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02293 (2013.01); H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/306 (2013.01);
Abstract

A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.


Find Patent Forward Citations

Loading…