Masahisa Watanabe

This inventor holds 17 USPTO granted patents and 1 published patent application, primarily in Substrate Processing. Top assignee: Tokyo Electron Limited. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahisa Watanabe. Retrieved from https://idiyas.com/inventor/masahisa-watanabe-p9li5dx5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17 (Patent Applications = 1)

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 514(Granted Patents)

Location History:

Tokyo, JP (2009 - 2012)
Nirasaki, JP (2011 - 2023)
Yamanashi, JP (2023 - 2024)

Company Filing History:

17 out of 10,933

Tokyo Electron Limited

patents

Years Active: 2009-2026

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Areas of Expertise:

Film Forming

Substrate Treatment

Silicon Film Removal

Metal Impurity Removal

Trench Filling

Polysilazane Processing

Sealing Structure

Vacuum Processing

Integrated Circuit Manufacturing

Heat Processing

Mask Structure

Substrate Delivery

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12740349 - Film forming method and film forming apparatus (2026-09-15),

2. 12482695 - Substrate treatment method and substrate treatment device (2025-11-25),

3. 12347676 - Substrate processing method and substrate processing system (2025-07-01),

4. 11915964 - Substrate processing apparatus and stage (2024-02-27),

5. 11749530 - Method of removing phosphorus-doped silicon film and system therefor (2023-09-05),

6. 11664266 - Substrate processing apparatus and substrate delivery method (2023-05-30),

7. 11476132 - Sealing structure, vacuum processing apparatus and sealing method (2022-10-18),

8. 10570508 - Film forming apparatus, film forming method and heat insulating member (2020-02-25),

9. 9852907 - Mask structure forming method and film forming apparatus (2017-12-26),

10. 9388495 - Method of forming mask structure (2016-07-12),

11. 8834817 - Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type (2014-09-16),

12. 8722510 - Trench-filling method and film-forming system (2014-05-13),

13. 8685832 - Trench filling method and method of manufacturing semiconductor integrated circuit device (2014-04-01),

14. 8455369 - Trench embedding method (2013-06-04),

15. 8122850 - Method and apparatus for processing polysilazane film (2012-02-28),

Title: Masahisa Watanabe: Innovator in Substrate Processing Technology

Introduction

Masahisa Watanabe is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing, holding a total of 15 patents. His innovative work has advanced the technology used in semiconductor manufacturing.

Latest Patents

Watanabe's latest patents include a substrate processing method and a substrate processing system. The substrate processing method involves preparing a substrate with a base that has an epitaxial layer formed by epitaxial growth, along with an insulating film that has a penetration portion exposing the epitaxial layer. The method further includes forming a silicon film on the exposed surface of the epitaxial layer and a metal film on the silicon film, which reacts to form a metal silicide film. Additionally, his substrate processing apparatus features a stage with a through-hole, a pin, and a support member designed to support the pin while processing the substrate.

Career Highlights

Watanabe is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His work has been instrumental in developing advanced substrate processing technologies that enhance manufacturing efficiency and product quality.

Collaborations

Watanabe has collaborated with notable coworkers, including Yuichiro Wagatsuma and Shingo Hishiya. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Masahisa Watanabe's innovative contributions to substrate processing technology have established him as a key figure in the semiconductor industry. His patents reflect a commitment to advancing manufacturing techniques and improving product performance.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: