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For the Inventor, By the Inventor

Nirasaki, Japan

Masahisa Watanabe

USPTO Granted Patents = 16

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 499(Granted Patents)


Location History:

  • Tokyo, JP (2009 - 2012)
  • Nirasaki, JP (2011 - 2023)
  • Yamanashi, JP (2023 - 2024)

Company Filing History:

goldMedal16 out of 10,295 
 
Tokyo Electron Limited
 patents

Years Active: 2009-2025

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16 patents (USPTO):Explore Patents
1. 12482695 - Substrate treatment method and substrate treatment device (2025-11-25),
2. 12347676 - Substrate processing method and substrate processing system (2025-07-01),
3. 11915964 - Substrate processing apparatus and stage (2024-02-27),
4. 11749530 - Method of removing phosphorus-doped silicon film and system therefor (2023-09-05),
5. 11664266 - Substrate processing apparatus and substrate delivery method (2023-05-30),
6. 11476132 - Sealing structure, vacuum processing apparatus and sealing method (2022-10-18),
7. 10570508 - Film forming apparatus, film forming method and heat insulating member (2020-02-25),
8. 9852907 - Mask structure forming method and film forming apparatus (2017-12-26),
9. 9388495 - Method of forming mask structure (2016-07-12),
10. 8834817 - Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type (2014-09-16),
11. 8722510 - Trench-filling method and film-forming system (2014-05-13),
12. 8685832 - Trench filling method and method of manufacturing semiconductor integrated circuit device (2014-04-01),
13. 8455369 - Trench embedding method (2013-06-04),
14. 8122850 - Method and apparatus for processing polysilazane film (2012-02-28),
15. 7879397 - Method for processing polysilazane film (2011-02-01),

Title: Masahisa Watanabe: Innovator in Substrate Processing Technology

Introduction

Masahisa Watanabe is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing, holding a total of 15 patents. His innovative work has advanced the technology used in semiconductor manufacturing.

Latest Patents

Watanabe's latest patents include a substrate processing method and a substrate processing system. The substrate processing method involves preparing a substrate with a base that has an epitaxial layer formed by epitaxial growth, along with an insulating film that has a penetration portion exposing the epitaxial layer. The method further includes forming a silicon film on the exposed surface of the epitaxial layer and a metal film on the silicon film, which reacts to form a metal silicide film. Additionally, his substrate processing apparatus features a stage with a through-hole, a pin, and a support member designed to support the pin while processing the substrate.

Career Highlights

Watanabe is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His work has been instrumental in developing advanced substrate processing technologies that enhance manufacturing efficiency and product quality.

Collaborations

Watanabe has collaborated with notable coworkers, including Yuichiro Wagatsuma and Shingo Hishiya. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Masahisa Watanabe's innovative contributions to substrate processing technology have established him as a key figure in the semiconductor industry. His patents reflect a commitment to advancing manufacturing techniques and improving product performance.

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