The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Mar. 07, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masahisa Watanabe, Nirasaki, JP;
Hiroshi Kubota, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); C23C 16/52 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02142 (2013.01); H01L 21/02167 (2013.01); H01L 21/02271 (2013.01); H01L 21/02321 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01);
Abstract
There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate; and subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten.