The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 05, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yoshihiro Takezawa, Yamanashi, JP;

Toru Kanazawa, Yamanashi, JP;

Yosuke Watanabe, Yamanashi, JP;

Tatsuya Miyahara, Yamanashi, JP;

Yuki Tanabe, Yamanashi, JP;

Daisuke Suzuki, Yamanashi, JP;

Masahisa Watanabe, Yamanashi, JP;

Keisuke Suzuki, Yamanashi, JP;

Tuhin Shuvra Basu, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
H10P 14/3806 (2026.01); C23C 16/24 (2013.01); H10P 14/3411 (2026.01); H10P 14/3454 (2026.01);
Abstract

A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.


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