Tokyo Electron Limited

Masahisa Watanabe

Yuichiro Wagatsuma

Mitsuhiro Okada

Shingo Hishiya

Tetsuya Shibata

Kimiya Aoki

Mayuko Nakamura

Hiroshi Kubota

Kazuhide Hasebe

Satoshi Takagi

Katsutoshi Ishii

Hachishiro Iizuka

Takashi Sakuma

Osamu Yokoyama

Katsuhiko Komori

Yoshihiro Takezawa

Kazuya Takahashi

Kentaro Asakura

Keisuke Fujita

Tetsuya Saitou

Kwangpyo Choi

Kazuaki Chiba

Kazuki Yano

A substrate treatment method of a substrate treatment device, which includes a stage on which a substrate is mounted, a heating element provided on the stage, and a rotation mechanism that rotates the stage, includes: mounting the substrate on the stage; and performing a process on the substrate, wherein the performing the process on the substrate has a plurality of steps, and wherein each of the plurality of steps includes controlling the heating element and controlling the rotation mechanism.

Substrate treatment method and substrate treatment device

A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

Substrate processing method and substrate processing system

A substrate processing apparatus for processing a substrate, includes a stage including a through-hole vertically penetrating the stage, a pin inserted into the through-hole, and a support member configured to support the pin. The pin has a protrusion configured to protrude from the upper surface of the stage through the through-hole, and a large diameter portion located below the protrusion and formed thicker than the protrusion. The stage further includes a lateral hole formed to extend from a side surface of the stage so as to intersect with the through-hole. The support member is inserted into the lateral hole. The support member is configured to support the pin by an engagement with the large diameter portion while the support member is inserted into the lateral hole. An upper opening end of the through-hole is thinner than the large diameter portion.

Substrate processing apparatus and stage

A method of removing a phosphorus-doped silicon film doped with phosphorus, includes: forming a silicon oxide film by oxidizing the phosphorus-doped silicon film in a substrate including the phosphorus-doped silicon film and an undoped silicon film which is not been doped with the phosphorus, wherein at least the phosphorus-doped silicon film is exposed to a surface of the substrate; and selectively etching and removing the silicon oxide film from the silicon oxide film and the undoped silicon film.

Method of removing phosphorus-doped silicon film and system therefor

A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

Substrate processing apparatus and substrate delivery method

A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

Sealing structure, vacuum processing apparatus and sealing method

There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

Film forming apparatus, film forming method and heat insulating member

There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate; and subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten.

Mask structure forming method and film forming apparatus

A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.

Method of forming mask structure

A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type

A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.

Trench-filling method and film-forming system

Provided is a trench filling method, which includes: forming a silicon oxide liner on a semiconductor substrate with trenches formed therein, the trenches including narrow-width portions having a first minimum isolation width and wide-width portions having a second minimum isolation width being wider than the first minimum isolation width; forming an oxidation-barrier film on the silicon oxide liner; forming a silicon liner on the oxidation-barrier film; filling the narrow-width portions with a first filling material; filling the wide-width portions with a second filling material; and oxidizing the silicon liner.

Trench filling method and method of manufacturing semiconductor integrated circuit device

A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer.

Trench embedding method

A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390&#xb0; C. to 410&#xb0; C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600&#xb0; C. to 800&#xb0; C.

Method and apparatus for processing polysilazane film

A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.

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Nirasaki, Japan

Masahisa Watanabe