The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Oct. 30, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/08 (2006.01); C23C 16/458 (2006.01); C23C 16/24 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4583 (2013.01); C23C 16/08 (2013.01); C23C 16/24 (2013.01); H01L 21/31144 (2013.01);
Abstract
A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.