The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jun. 15, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Yoshihiro Takezawa, Nirasaki, JP;
Masahisa Watanabe, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/02236 (2013.01); H01L 21/30604 (2013.01); H01L 21/67063 (2013.01);
Abstract
A method of removing a phosphorus-doped silicon film doped with phosphorus, includes: forming a silicon oxide film by oxidizing the phosphorus-doped silicon film in a substrate including the phosphorus-doped silicon film and an undoped silicon film which is not been doped with the phosphorus, wherein at least the phosphorus-doped silicon film is exposed to a surface of the substrate; and selectively etching and removing the silicon oxide film from the silicon oxide film and the undoped silicon film.