The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Aug. 09, 2021
Tokyo Electron Limited, Tokyo, JP;
Osamu Yokoyama, Yamanashi, JP;
Kwangpyo Choi, Yamanashi, JP;
Kazuki Hashimoto, Yamanashi, JP;
Rio Shimizu, Yamanashi, JP;
Takashi Kobayashi, Yamanashi, JP;
Takashi Sakuma, Yamanashi, JP;
Shinya Okabe, Hsin-chu, TW;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.