The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Feb. 15, 2016
Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method
Tokyo Electron Limited, Tokyo, JP;
Tadahiro Ishizaka, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vesselby supplying the CO gas as a carrier gas from a CO gas containerconfigured to contain the CO gas into a film forming source containerconfigured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vesselfrom the CO gas containerafter stopping the introducing of the mixed gas into the processing vesselThe deposition process and the CO gas introduction process are repeated multiple times.