The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Dec. 21, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takeshi Itatani, Yamanashi, JP;

Tadahiro Ishizaka, Yamanashi, JP;

Kandabara Tapily, Albany, NY (US);

Kai-Hung Yu, Albany, NY (US);

Wanjae Park, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); H01L 21/0228 (2013.01); H01L 21/31111 (2013.01); H01L 21/68714 (2013.01); H01L 21/76879 (2013.01);
Abstract

A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BClgas or a BClgas plasma generated by introducing BClgas, stopping introduction of the BClgas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.


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