The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Nov. 14, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tadahiro Ishizaka, Yamanashi, JP;
Masaki Koizumi, Yamanashi, JP;
Masaki Sano, Yamanashi, JP;
Seokhyoung Hong, Yamanashi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/3205 (2006.01); H01L 21/285 (2006.01); C23C 16/52 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 27/105 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/52 (2013.01); H01L 21/28088 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/76846 (2013.01); H01L 23/53266 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 27/105 (2013.01); H01L 29/4966 (2013.01);
Abstract
A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.