The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Jun. 29, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tadahiro Ishizaka, Nirasaki, JP;

Toshiaki Fujisato, Nirasaki, JP;

Cheonsoo Han, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/44 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 23/528 (2013.01); H01L 23/53252 (2013.01);
Abstract

There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.


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