The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Sep. 27, 2018
Tokyo Electron Limited, Tokyo, JP;
Yumiko Kawano, Nirasaki, JP;
Shuji Azumo, Nirasaki, JP;
Hiroki Murakami, Nirasaki, JP;
Michitaka Aita, Nirasaki, JP;
Tadahiro Ishizaka, Nirasaki, JP;
Koji Akiyama, Nirasaki, JP;
Yusaku Kashiwagi, Nirasaki, JP;
Hajime Nakabayashi, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO, Pt, Pd, CuO, and CuO, using an Ru(EtCp)gas and an Ogas; and selectively forming a first SiO-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiOfilm only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.