The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
May. 09, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01);
Abstract
An etching method includes: adsorbing an adsorbate based on a processing gas containing BClgas onto a target object, which serves as a to-be-etched object, by: supplying Hgas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the Hgas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.