Applied Materials, Inc.

Asm IP Holding B.v.

Cornell Research Foundation Inc.

Paul F Ma

Mei Yin Chang

Seshadri Ganguli

Dien-Yeh Wu

Jiang Lu

Annamalai Lakshmanan

Liqi Wu

Schubert S Chu

Sang Ho Yu

Guodan Wei

Mehul B Naik

Christophe Marcadal

Eric James Shero

Wei V Tang

Ben-Li Sheu

Ludovic Godet

David P Thompson

Lei Zhou

Michael Sterling Jackson

Chang Ke

Wenyu Zhang

Siddarth A Krishnan

Yixiong Yang

Joseph F AuBuchon

Daping Yao

Cheng Pan

Norman M Nakashima

Biao Liu

Yu Lei

Naomi Yoshida

Kaushal Kishore Singh

Bencherki Mebarki

Shih Chung Chen

Atashi Basu

Lin Dong

Kavita Shah

Frederick C Wu

Guoqiang Jian

Hyman W H Lam

Joseph Yudovsky

Chien-Teh Kao

Rajesh Sathiyanarayanan

Srinivas Guggilla

Faruk Gungor

Weifeng Ye

Chi-Chou Lin

Srinivas Gandikota

Hoon Sik Kim

John C Forster

Xianmin Tang

Deenesh Padhi

Qi Xie

He Ren

Xinliang Lu

Yong Cao

Maitreyee Mahajani

Patricia M Liu

Charles Dezelah

Xiaoxiong Yuan

Todd Robert Dunn

Jacqueline S Wrench

Yi Xu

Jereld Lee Winkler

Murali K Narasimhan

Tobin Kaufman-Osborn

Giuseppe Alessio Verni

Erica Chen

Kevin Vincent Moraes

Jing Tang

Sang-Ho Yu

Shankar Swaminathan

Yana Cheng

Nobuyuki Sasaki

Bed Prasad Sharma

Hyoung-Chan Ha

Srinivas D Nemani

Michael Patrick Chudzik

Feng Quan Liu

Anantha K Subramani

Muhammad M Rasheed

Jeffrey W Anthis

Avgerinos V Gelatos

Timothy Weidman

Xinyu Fu

Petri Raisanen

Kai Wu

Steven C H Hung

Benjamin Schmiege

Tae Hong Ha

Mario Dan Sanchez

Kenric T Choi

Vikash Banthia

Song-Moon Suh

Timothy B Michaelson

Xing Lin

Paul L Deaton

James R Engstrom

Alexandros Demos

Wentao Wang

Aravind S Killampalli

Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Apparatus for providing a gas mixture to a reaction chamber and method of using same

Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Methods and apparatus for cleaning a vessel

Weighted lift pin

Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Method and system for depositing molybdenum layers

Methods for forming transition metal layers on a surface of a substrate are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

Method for forming structures including transition metal layers

Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Reactor system including a gas distribution assembly for use with activated species and method of using same

A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer

Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Deposition of hafnium oxide within a high aspect ratio hole

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Wafer treatment for achieving defect-free self-assembled monolayers

Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Method for depositing molybdenum layers using an underlayer

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

Doping control of metal nitride films

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Methods for enhancing selectivity in SAM-based selective deposition

Growing community of inventors

Santa Clara, CA, United States of America

Paul F Ma