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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11901175 B1

PDFFull Text
Date of Patent:
Feb. 13, 2024

Filed:

Jul. 07, 2022

Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Eric James Shero, Phoenix, AZ (US);

Paul Ma, Scottsdale, AZ (US);

Bed Prasad Sharma, Gilbert, AZ (US);

Shankar Swaminathan, Phoenix, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:

Snell & Wilmer L.L.P.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02315 (2013.01); H01L 21/68714 (2013.01); H01L 21/76897 (2013.01); H01J 37/32899 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02208 (2013.01); H01L 21/67184 (2013.01);
Abstract

A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Find Patent Forward Citations

Shero, Eric. (2024). Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer (U.S. Patent No. 11901175). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11901175

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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