The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Oct. 07, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Yongjing Lin, San Jose, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Lin Dong, San Jose, CA (US);
Liqi Wu, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
Steven Hung, Sunnyvale, CA (US);
Karla Bernal Ramos, Santa Clara, CA (US);
Yixiong Yang, San Jose, CA (US);
Wei Tang, Santa Clara, CA (US);
Sang-Ho Yu, Santa Clara, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.