Rongjun Wang

This inventor holds 84 USPTO granted patents and 43 published patent applications and 2 EPO patents, primarily in Physical Vapor Deposition (CPC class H01L). Top assignee: Applied Materials, Inc.. Active years: 2007-2026.

USPTO Granted Patents = 84 (Patent Applications = 43)

% Patents Active = 73.8

EPO Patents = 2 (Patent Applications = 7)

Average Co-Inventor Count = 5.3

ph-index = 7

Forward Citations = 454(Granted Patents)

Forward Citations (Not Self Cited) = 428(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sunnyvale, CA (US) (2007 - 2010)
Cupertino, CA (US) (2010 - 2015)
Dublin, CA (US) (2012 - 2024)

Company Filing History:

83 out of 14,391

Applied Materials, Inc.

patents

where one patent can have more than one assignee

Years Active: 2007-2026

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Areas of Expertise:

Low Resistivity Contacts

Gapfill Techniques

Magnetic Tunnel Junctions

MRAM Applications

Physical Vapor Deposition

Ion Fraction Control

Dielectric Sputtering

Optoelectronic Devices

Multi-Cathode Processing

Sputtering Techniques

Amorphous Silicon Layers

Resistance-Area Control

84 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733466 - Integrated PVD tungsten liner and seamless CVD tungsten fill (2026-09-08),

2. 12721123 - Integration solution for NAND deep contact gap fill (2026-08-25),

3. 12721122 - Method for metal gapfill (2026-08-25),

4. 12677648 - Treatment of tungsten surface for tungsten gap-fill (2026-07-07),

5. 12652980 - Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration (2026-06-09),

6. 12588443 - Methods for forming low resistivity contacts (2026-03-24),

7. 12568804 - Method of in-situ selective metal removal via gradient oxidation for gapfill (2026-03-03),

8. 12473643 - Low resistivity gapfill for logic devices (2025-11-18),

9. 12408557 - Methods for forming structures with desired crystallinity for MRAM applications (2025-09-02),

10. 12402535 - Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy (2025-08-26),

11. 12394619 - Metal oxide preclean for bottom-up gapfill in MEOL and BEOL (2025-08-19),

12. 12374568 - One chamber multi-station selective metal removal (2025-07-29),

13. 12338527 - Shutter disk for physical vapor deposition (PVD) chamber (2025-06-24),

14. 12272659 - Methods for forming metal gapfill with low resistivity (2025-04-08),

15. 12272551 - Selective metal removal with flowable polymer (2025-04-08),

Title: The Innovative Journey of Rongjun Wang

Introduction: Rongjun Wang, a visionary inventor based in Dublin, CA (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Wang's latest patents showcase his expertise in areas such as artificial intelligence, renewable energy, and biotechnology, demonstrating his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, Wang has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors.

Collaborations: Wang has collaborated with top research institutions, universities, and tech companies to further his inventions, showcasing his ability to work across disciplines to achieve groundbreaking results.

Conclusion: Rongjun Wang's dedication to innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.