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For the Inventor, By the Inventor

Dublin, CA, United States of America

Rongjun Wang

LinkedIn
USPTO Granted Patents = 77 

 

Average Co-Inventor Count = 5.1

ph-index = 7

Forward Citations = 450(Granted Patents)

Forward Citations (Not Self Cited) = 428(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (2007 - 2010)
  • Cupertino, CA (US) (2010 - 2015)
  • Dublin, CA (US) (2012 - 2024)

Company Filing History:

goldMedal77 out of 13,713 
 
Applied Materials, Inc.
 patents

Years Active: 2007-2025

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Areas of Expertise:
Physical Vapor Deposition
Magnetic Tunnel Junctions
MRAM Applications
Thin Film Material Deposition
Dielectric Sputtering
Oxygen Controlled PVD
Metal Gapfill
Ion Fraction Control
Sputtering Techniques
Aluminum-Nitride Buffer
Selective Metal Removal
RF-DC Sputtering
77 patents (USPTO):Explore Patents
1. 12473643 - Low resistivity gapfill for logic devices (2025-11-18),
2. 12408557 - Methods for forming structures with desired crystallinity for MRAM applications (2025-09-02),
3. 12402535 - Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy (2025-08-26),
4. 12394619 - Metal oxide preclean for bottom-up gapfill in MEOL and BEOL (2025-08-19),
5. 12374568 - One chamber multi-station selective metal removal (2025-07-29),
6. 12338527 - Shutter disk for physical vapor deposition (PVD) chamber (2025-06-24),
7. 12272659 - Methods for forming metal gapfill with low resistivity (2025-04-08),
8. 12272551 - Selective metal removal with flowable polymer (2025-04-08),
9. 12112890 - Top magnets for decreased non-uniformity in PVD (2024-10-08),
10. 12094699 - Methods and apparatus for controlling ion fraction in physical vapor deposition processes (2024-09-17),
11. 11898236 - Methods and apparatus for processing a substrate (2024-02-13),
12. 11810770 - Methods and apparatus for controlling ion fraction in physical vapor deposition processes (2023-11-07),
13. 11637107 - Silicon-containing layer for bit line resistance reduction (2023-04-25),
14. 11626410 - Silicon-containing layer for bit line resistance reduction (2023-04-11),
15. 11575071 - Oxygen controlled PVD ALN buffer for GAN-based optoelectronic and electronic devices (2023-02-07),

Title: The Innovative Journey of Rongjun Wang

Introduction: Rongjun Wang, a visionary inventor based in Dublin, CA (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Wang's latest patents showcase his expertise in areas such as artificial intelligence, renewable energy, and biotechnology, demonstrating his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, Wang has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors.

Collaborations: Wang has collaborated with top research institutions, universities, and tech companies to further his inventions, showcasing his ability to work across disciplines to achieve groundbreaking results.

Conclusion: Rongjun Wang's dedication to innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

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