The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jun. 16, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Shiyu Yue, Santa Clara, CA (US);
Jiajie Cen, Santa Clara, CA (US);
Sahil Jaykumar Patel, Sunnyvale, CA (US);
Zhimin Qi, Santa Clara, CA (US);
Ju Hyun Oh, San Jose, CA (US);
Aixi Zhang, Santa Clara, CA (US);
Xingyao Gao, Santa Jose, CA (US);
Wei Lei, Santa Clara, CA (US);
Yi Xu, San Jose, CA (US);
Yu Lei, Belmont, CA (US);
Tsung-Han Yang, San Jose, CA (US);
Xiaodong Wang, San Jose, CA (US);
Xiangjin Xie, Fremont, CA (US);
Yixiong Yang, San Jose, CA (US);
Kevin Kashefi, Dublin, CA (US);
Rongjun Wang, Dublin, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl, MoCl) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.