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For the Inventor, By the Inventor

San Jose, CA, United States of America

Tsung-Han Yang

This inventor holds 19 USPTO granted patents and 14 published patent applications, primarily in Tungsten Deposition. Top assignees: Applied Materials, Inc., Lam Research Corporation, Novellus Systems Incorporated. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsung-Han Yang. Retrieved from https://idiyas.com/inventor/tsung-han-yang-ksf5e9xv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 89.5

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 109(Granted Patents)


Location History:

  • San Jose, CA (US) (2015 - 2024)
  • Santa Clara, CA (US) (2024)

Company Filing History:

goldMedal8 out of 14,523 
 
Applied Materials, Inc.
 patents
silverMedal6 out of 3,958 
 
Lam Research Corporation
 patents
bronzeMedal5 out of 993 
 
Novellus Systems Incorporated
 patents

Years Active: 2015-2026

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Areas of Expertise:
Tungsten Liner
CVD Tungsten Fill
Gap-Fill Techniques
Selective Oxidation
Metal Fill Process
Low Stress Fill
Tensile Tungsten Films
Compressive Tungsten Films
RTP Chamber
Nucleation Inhibition
Oxide Layer Formation
Backside Reactive Inhibition
19 patents (USPTO):Explore Patents
1. 12733466 - Integrated PVD tungsten liner and seamless CVD tungsten fill (2026-09-08),
2. 12677648 - Treatment of tungsten surface for tungsten gap-fill (2026-07-07),
3. 12476143 - Backside reactive inhibition gas (2025-11-18),
4. 12473643 - Low resistivity gapfill for logic devices (2025-11-18),
5. 12394619 - Metal oxide preclean for bottom-up gapfill in MEOL and BEOL (2025-08-19),
6. 12387979 - Tungsten feature fill with nucleation inhibition (2025-08-12),
7. 12341032 - Methods of selective oxidation on rapid thermal processing (RTP) chamber with active steam generation (2025-06-24),
8. 12272531 - Dual pressure oxidation method for forming an oxide layer in a feature (2025-04-08),
9. 12261081 - Tungsten feature fill with inhibition control (2025-03-25),
10. 12173399 - Reducing line bending during metal fill process (2024-12-24),
11. 12002679 - High step coverage tungsten deposition (2024-06-04),
12. 11996305 - Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation (2024-05-28),
13. 11978666 - Void free low stress fill (2024-05-07),
14. 11761080 - Method for processing a substrate by oscillating a boundary layer of the flow of one or more process gases over a surface of a substrate and systems for processing a substrate using the method (2023-09-19),
15. 11437269 - Tungsten feature fill with nucleation inhibition (2022-09-06),

Title: The Innovator Profile: Tsung-Han Yang

Introduction:

Tsung-Han Yang, a prolific inventor based in San Jose, CA, has made significant contributions to the field of semiconductor technology with a total of 7 patents under his name.

Latest Patents:

Among his latest patents is the innovative "Void free low stress fill" method, which focuses on depositing low-stress and void-free metal films in deep features by employing sophisticated sidewall treatment techniques. Another notable patent is the "Method for processing a substrate by oscillating a boundary layer of the flow of one or more process gases over a surface of a substrate," demonstrating Yang's expertise in optimizing substrate processing operations.

Career Highlights:

Yang has honed his skills and expertise while working in renowned companies such as Novellus Systems Incorporated and Lam Research Corporation. His professional journey reflects a commitment to pioneering research and development in the semiconductor industry.

Collaborations:

Throughout his career, Tsung-Han Yang has collaborated with esteemed colleagues such as Anand Chandrashekar and Feng Chen, fostering a culture of innovation and knowledge exchange within the workplace. These collaborations have played a pivotal role in driving groundbreaking advancements in semiconductor technology.

Conclusion:

In conclusion, Tsung-Han Yang stands as a visionary inventor whose relentless pursuit of innovation has left a lasting impact on the semiconductor industry. His patents and career highlights underscore his dedication to pushing the boundaries of technological advancement, making him a key figure in the realm of semiconductor innovation.

(Note: Please note that the names of companies have been formatted as per the request.)

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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