The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Feb. 17, 2021
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Gang Liu, Fremont, CA (US);
Anand Chandrashekar, Fremont, CA (US);
Tsung-Han Yang, San Jose, CA (US);
Michael Bowes, Scotts Valley, CA (US);
Leonard Wai Fung Kho, San Francisco, CA (US);
Eric H. Lenz, Livermore, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 16/32 (2013.01); C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/45565 (2013.01); C23C 16/56 (2013.01); H01L 21/28506 (2013.01);
Abstract
Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.