The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Jun. 28, 2019
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Tsung-Han Yang, San Jose, CA (US);

Anand Chandrashekar, Fremont, CA (US);

Jasmine Lin, San Jose, CA (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); H01L 21/321 (2006.01); C23C 16/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); C23C 16/04 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01); H01L 21/76879 (2013.01); H01L 27/10891 (2013.01); H01L 21/28562 (2013.01); H01L 21/76898 (2013.01);
Abstract

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.


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