The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

May. 26, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yi Xu, San Jose, CA (US);

Yu Lei, Belmont, CA (US);

Aixi Zhang, Sunnyvale, CA (US);

Bingqian Liu, Sunnyvale, CA (US);

Zhimin Qi, Fremont, CA (US);

Wei Lei, Campbell, CA (US);

Rongjun Wang, Dublin, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 14/40 (2026.01); H10P 14/43 (2026.01); H10P 14/44 (2026.01);
U.S. Cl.
CPC ...
H10W 20/056 (2026.01); H10P 14/412 (2026.01); H10P 14/43 (2026.01); H10P 14/44 (2026.01);
Abstract

A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.


Find Patent Forward Citations

Xu, Yi. (2026). Method for metal gapfill (U.S. Patent No. 12721122). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12721122

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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