The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Sep. 14, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Yi Xu, San Jose, CA (US);
Yu Lei, Belmont, CA (US);
Zhimin Qi, Fremont, CA (US);
Aixi Zhang, Sunnyvale, CA (US);
Xianyuan Zhao, Santa Clara, CA (US);
Wei Lei, Campbell, CA (US);
Xingyao Gao, Sunnyvale, CA (US);
Shirish A. Pethe, Cupertino, CA (US);
Tao Huang, San Jose, CA (US);
Xiang Chang, San Jose, CA (US);
Patrick Po-Chun Li, Sunnyvale, CA (US);
Geraldine Vasquez, San Jose, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Rongjun Wang, Dublin, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.