Patrick Po-Chun Li

Title: **Innovator Spotlight: Patrick Po-Chun Li**

Introduction

Patrick Po-Chun Li is an accomplished inventor based in Sunnyvale, California. With an impressive patent portfolio, he has made significant contributions to the field of semiconductor manufacturing.

Latest Patents

Patrick holds one patent titled "Methods for forming metal gapfill with low resistivity." This innovative patent outlines methods to reduce resistivity in metal gapfill by depositing a conformal layer within an opening of a feature. The process includes applying a first thickness of the conformal layer at approximately 10 microns or less and a non-conformal metal layer at the bottom of the opening and on the field using an anisotropic deposition process. A second thickness of this metal layer is maintained at approximately 30 microns or greater, ensuring that the metal gapfill material completely fills the opening without any voids.

Career Highlights

Patrick is currently employed at Applied Materials, Inc., a leader in materials engineering solutions. His expertise in semiconductor fabrication has played a crucial role in advancing the technology used in modern electronics.

Collaborations

Throughout his career, Patrick has collaborated with esteemed colleagues such as Yi Xu and Yu Lei. Their teamwork has further enhanced the innovative processes within the semiconductor industry, showcasing the importance of collaboration in achieving groundbreaking technological advancements.

Conclusion

Patrick Po-Chun Li's contributions to the field of semiconductor manufacturing through his patent illustrate the vital role inventors play in driving technological progress. His work not only reflects personal innovation but also impacts the larger landscape of electronic manufacturing processes.