Applied Materials, Inc.

Patrick Po-Chun Li

Rongjun Wang

Dien-Yeh Wu

Yu Lei

Yi Xu

Tao Huang

Wei Lei

Shirish A Pethe

Aixi Zhang

Zhimin Qi

Geraldine M Vasquez

Xingyao Gao

Xianyuan Zhao

Xiang Chang

Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.

Methods for forming metal gapfill with low resistivity

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Sunnyvale, CA, United States of America

Patrick Po-Chun Li