The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Apr. 26, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Jiang Lu, Milpitas, CA (US);
Liqi Wu, San Jose, CA (US);
Wei Dou, Sunnyvale, CA (US);
Weifeng Ye, San Jose, CA (US);
Shih Chung Chen, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
Xianmin Tang, San Jose, CA (US);
Yiyang Wan, Sunnyvale, CA (US);
Shumao Zhang, San Jose, CA (US);
Jianqiu Guo, Santa Clara, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.