Sung Won Jun

Title: Innovations of Sung Won Jun in Semiconductor Technology

Introduction

Sung Won Jun is a prominent inventor based in San Jose, California, known for his significant contributions to semiconductor technology. With a total of five patents to his name, he has made remarkable advancements in device isolation methods and structures.

Latest Patents

His latest patents include innovations in horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. The embodiments described in these patents relate to methods and device structures that utilize a superlattice structure comprising different materials arranged in an alternatingly stacked formation on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent to the substrate. These advancements are crucial for enhancing the performance and efficiency of semiconductor devices.

Career Highlights

Sung Won Jun is currently employed at Applied Materials, Inc., a leading company in the semiconductor manufacturing equipment industry. His work focuses on developing innovative solutions that address the challenges faced in modern semiconductor fabrication.

Collaborations

Throughout his career, he has collaborated with notable colleagues, including Shiyu Sun and Naomi Yoshida, contributing to a dynamic and innovative work environment.

Conclusion

Sung Won Jun's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in device isolation methods, paving the way for future innovations.