Applied Materials, Inc.

Sung Won Jun

Michael Patrick Chudzik

Benjamin Colombeau

Naomi Yoshida

Shiyu Sun

Theresa Kramer Guarini

Errol Antonio C Sanchez

Bingxi Sun Wood

Nam Sung Kim

Vanessa Pena

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Horizontal gate all around and FinFET device isolation

Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.

Horizontal gate all around device isolation

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San Jose, CA, United States of America

Sung Won Jun