Vanessa Pena

Title: Innovations by Inventor Vanessa Pena

Introduction

Vanessa Pena is a notable inventor based in Flemish Brabant, Belgium. She has made significant contributions to the field of semiconductor devices, holding a total of five patents. Her work focuses on advanced technologies that enhance the performance and efficiency of electronic components.

Latest Patents

One of her latest patents is titled "Monolithic complementary field-effect transistors having carbon-doped release layers." This invention provides semiconductor devices, particularly CFETs, with a fully strained superlattice structure. The channel layers are designed to be substantially free of defects, and the release layers feature a reduced selective removal rate. The CFET comprises a vertically stacked superlattice structure on a substrate, which includes a first hGAA structure, a sacrificial layer made of silicon germanium, and a second hGAA structure. Each of these structures consists of alternating layers of nanosheet channel layers and nanosheet release layers.

Another significant patent by Vanessa is related to "Horizontal gate all around and FinFET device isolation." This invention outlines methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. The superlattice structure is formed on a substrate with different materials arranged in an alternatingly stacked formation, enhancing the overall device performance.

Career Highlights

Vanessa Pena is currently employed at Applied Materials, Inc., where she continues to innovate in the semiconductor industry. Her expertise in semiconductor technology has positioned her as a key player in the development of advanced electronic devices.

Collaborations

Throughout her career, Vanessa has collaborated with talented individuals such as Naomi Yoshida and Shiyu Sun. These collaborations have contributed to her success and the advancement of her innovative projects.

Conclusion

Vanessa Pena is a pioneering inventor whose work in semiconductor technology has led to significant advancements in the field. Her patents reflect her commitment to innovation and excellence in electronic device design.