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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Nam Sung Kim

This inventor holds 10 USPTO granted patents and 3 published patent applications. Top assignee: Applied Materials, Inc.. Active years: 2018-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nam Sung Kim. Retrieved from https://idiyas.com/inventor/nam-sung-kim-bdfl1igs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 90.0

Average Co-Inventor Count = 6.3

ph-index = 4

Forward Citations = 61(Granted Patents)


Company Filing History:

goldMedal10 out of 14,482 
 
Applied Materials, Inc.
 patents

Years Active: 2018-2023

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10 patents (USPTO):Explore Patents
1. 11848369 - Horizontal gate-all-around device nanowire air gap spacer formation (2023-12-19),
2. 11282936 - Horizontal gate all around device nanowire air gap spacer formation (2022-03-22),
3. 11145761 - Horizontal gate all around and FinFET device isolation (2021-10-12),
4. 11018223 - Methods for forming device isolation for semiconductor applications (2021-05-25),
5. 10777650 - Horizontal gate all around device nanowire air gap spacer formation (2020-09-15),
6. 10490666 - Horizontal gate all around and FinFET device isolation (2019-11-26),
7. 10269571 - Methods for fabricating nanowire for semiconductor applications (2019-04-23),
8. 10177227 - Method for fabricating junctions and spacers for horizontal gate all around devices (2019-01-08),
9. 9960275 - Method of fabricating air-gap spacer for N7/N5 finFET and beyond (2018-05-01),
10. 9865735 - Horizontal gate all around and FinFET device isolation (2018-01-09),

Title: Nam Sung Kim: Innovating the Future of Semiconductor Technology

Introduction

Nam Sung Kim, based in Sunnyvale, California, is an accomplished inventor recognized for his significant contributions in the field of semiconductor technology. With a remarkable portfolio comprising 10 patents, Kim has established himself as a leading figure in the advancement of innovative nanowire structures.

Latest Patents

Among his latest innovations is the patent related to the "Horizontal Gate-All-Around Device Nanowire Air Gap Spacer Formation." This patent outlines methods for creating complex nanowire structures, including horizontal gate-all-around (hGAA) structures. The innovative method involves selectively etching material to create recesses and depositing a dielectric material, ensuring effective gap formation essential for semiconductor device performance. Moreover, the patent provides detailed methodologies for forming field-effect transistors (FET) using the described nanowire structures, showcasing significant improvements in device efficiency for semiconductor chips.

Career Highlights

Nam Sung Kim is currently affiliated with Applied Materials, Inc., a leading company in materials engineering solutions. His expertise in semiconductor fabrication techniques has enabled advancements in manufacturing processes, contributing to enhanced device performance and reliability.

Collaborations

Throughout his career, Kim has collaborated with various esteemed professionals, including Shiyu Sun and Naomi Yoshida. These collaborations highlight the teamwork and collective effort within the semiconductor industry, aimed at pushing the boundaries of innovation.

Conclusion

With 10 patents to his name, Nam Sung Kim continues to be an influential inventor in semiconductor technology. His contributions are paving the way for the next generation of electronic devices, reflecting his unwavering commitment to innovation and excellence in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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