The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Apr. 18, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Chih-Yang Chang, Cupertino, CA (US);
Raymond Hoiman Hung, Palo Alto, CA (US);
Tatsuya E. Sato, San Jose, CA (US);
Nam Sung Kim, Sunnyvale, CA (US);
Shiyu Sun, Santa Clara, CA (US);
Bingxi Sun Wood, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a three-dimensional fin structure protruding from a surface of a substrate, the three-dimensional fin structure comprising a top surface and two opposing sidewalls, a first insulating layer formed on the two opposing sidewalls of the three-dimension fin structure, a sacrificial spacer layer conformally formed on the first insulating layer, wherein the sacrificial spacer layer comprises an aluminum oxide based material or a titanium nitride based material, and a second insulating layer conformally formed on the sacrificial spacer layer.