The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Apr. 25, 2017
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Lin Dong, San Jose, CA (US);
Andrew Kummel, San Diego, CA (US);
Jessica Kachian, Sunnyvale, CA (US);
Mary Edmonds, San Diego, CA (US);
Steve Wolf, San Diego, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNmonolayer at temperatures below about 300° C.