The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jul. 12, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Paul F. Ma, Santa Clara, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Rajesh Sathiyanarayanan, Bangalore, IN;
Atashi Basu, Menlo Park, CA (US);
Lin Dong, San Jose, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Liqi Wu, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 29/401 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.